Measurement of Oxygen Diffusion in Dy2O3 and Gd2O3 by Studying High-Temperature Oxidation of the Metals

Studies of the oxidation of Gd and Dy at P _O2's from 10^−0.3 to 10^−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P ₀₂ semiconducting domain yielded oxygen diffusion coefficients in Dy₂O₃ in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd₂O₃ which are considerably below literature values for monoclinic single-crystal Gd₂O₃. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P _O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10⁻⁶ to 10⁻⁷Ω⁻¹ cm⁻¹.