| TFT 5次光刻背沟道刻蚀型与保护型工艺 |
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| 引用本文： | 辛玉洁,于春崎.TFT 5次光刻背沟道刻蚀型与保护型工艺[J].半导体技术,2008,33(12). |
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| 作者姓名： | 辛玉洁 于春崎 |
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| 作者单位： | 中国科学院,长春光学精密机械与物理研究所,长春,130033;中国科学院,长春方圆光电技术有限责任公司,长春,130033;中国科学院研究生院,北京,100039;中国科学院,长春光学精密机械与物理研究所,长春,130033;中国科学院研究生院,北京,100039 |
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| 摘 要： | 5次光刻工艺(简称5PEP)是一种新的研究,分为背沟道刻蚀型和背沟道保护型.5PEP改变了TFT结构和原理,相对于常用的7 PEP可缩短生产周期,减少使用设备,提升成品率,降低成本.研究制定了背沟道刻蚀型与背沟道保护型5PEP的主要工序步骤,并通过50.8 mm液晶屏多次小批量投产进行试验.探讨了刻蚀型5PEP中a-Si岛刻蚀不良、SiNx刻蚀跨断等问题.取得合理的工艺参数,使5PEP能应用于小尺寸液晶屏的TFT量产.
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| 关 键 词： | 薄膜晶体管 5次光刻 背沟道刻蚀型 背沟道保护型 a-Si岛 |
Process of TFT 5PEP of Back-Channel-Etching and Back-Channel Protection |
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| Xin Yujie,Yu Chunqi.Process of TFT 5PEP of Back-Channel-Etching and Back-Channel Protection[J].Semiconductor Technology,2008,33(12). |
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| Authors: | Xin Yujie Yu Chunqi |
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| Affiliation: | Xin Yujie1,2,Yu Chunqi1a,2 (1.a.Changchun Institute of Optics,Fine Mechanics , PhySics,Chinese Academy of Sciences,b.Changchun Fangyuan Opto-Electronic Technology Co.,Ltd.,Changchun 130033,China,2.Graduate School of the Chinese Academy of Sciences,Beijing 100039,China) |
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| Abstract: | As a new research 5 photo engraving process(5PEP)is divided into back channel etching and back channel protection.5PEP changed the TFT(thin film transistor) structure and the principle.Comparing with 7 photoetching craft,it has great progress of reducing the production cycle and equipment,promoting the rate of yields with low cost.The procedure step of back channel etching and the back channel protection 5PEP was settled,and it was carried out through 50.8 mm liquid crystal display in small batch.The a-Si i... |
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| Keywords: | TFT 5PEP back-channel-etching back-channel protection a-Si island |
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