Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire |
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Authors: | D Zhi U Tisch S H Zamir M Wei E Zolotoyabko J Salzman |
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Affiliation: | (1) Microelectronics Research Center, Technion-IIT, 32000 Haifa, Israel;(2) Department of Materials Engineering, Technion-IIT, 32000 Haifa, Israel;(3) Department of Materials Engineering and Solid State Institute, Technion-IIT, 32000 Haifa, Israel;(4) Department of Electrical Engineering and Microelectronics Research Center, Technion-IIT, 32000 Haifa, Israel |
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Abstract: | Thin GaN films, grown by metal organic chemical vapor deposition on the basal plane of sapphire substrates, were characterized
by x-ray pole figures, high-resolution x-ray diffraction and transmission electron microscopy. This combination was found
sensitive to small amounts (down to 0.1%) of cubic GaN phase in specimens subjected to surface nitridation treatment prior
to epitaxial growth. The presence of the cubic phase and its orientation relations to the hexagonal GaN matrix was established
by means of pole figures and selected area electron diffraction. The amount of cubic phase was determined by comparing the
integrated x-ray diffraction intensities of the (311) cubic GaN and the (11.2) hexagonal GaN reflections. Optimum nitridation
duration was found, which corresponds to almost complete suppression of the cubic phase formation. |
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Keywords: | X-ray diffraction cubic GaN MOCVD |
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