Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films |
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| Affiliation: | 1. Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China;2. Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain;3. Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain;4. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi''an Jiaotong University, Xi''an 710049, China;2. Fraunhofer IWM, 79108 Freiburg, Germany;3. Institute for Applied Materials, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;4. Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada;1. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, People’s Republic of China;2. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China;3. Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, People’s Republic of China;4. School of Logistics Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China;5. State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430070, People’s Republic of China;1. National Institute for Materials Physics, Atomistilor 405A, Magurele 077125, Romania;2. Polytechnic University of Bucharest, Faculty of Chemical Engineering and Biotechnologies, Department Oxide Materials Science & Engineering, 1-7 Gh. Polizu, Bucharest 011061, Romania;3. National Institute for Lasers, Plasma and Radiation Physics, P.O. Box MG54, 077125 Magurele, Romania;4. Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest, Romania;5. Dielectrics, Ferroelectrics & Multiferroics Group, Faculty of Physics, Alexandru Ioan Cuza University of Iasi, 700506 Iasi, Romania;1. School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia;2. Shenzhen Key Laboratory of Cross-scale Manufacturing Mechanics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China;3. SUSTech Institute for Manufacturing Innovation, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China;4. Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China;5. Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China;6. Electron Microscope Unit, Mark Wainwright Analytical Centre, The University of New South Wales, Sydney, NSW 2052, Australia |
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| Abstract: | Ferroelectric thin films with switchable polarization and anomalous photoelectric effects have received extensive attention recently. However, the improvement of photoelectric performance is accompanied by the weakening of ferroelectricity. Here, both chemical and interlayer design are used to regulate the polarization and optical properties of BiFeO3-based ferroelectric films. We achieved an improvement in both ferroelectricity and bandgap by chemical composition. The remanent polarization has been enhanced to 73.8 μC/cm2 from 0.2 μC/cm2, ascribed to the structural transition. The band gap of Eu-BiFeO3 films has been reduced to 2.23 eV from 2.42 eV due to the unique energy level from Eu 4f, indicating the enhanced visible-light-absorbing capability. We have designed a "sandwich" interfacial structure of homogeneous Eu-BiFeO3 films. A clever combination between optimal ferroelectricity and narrow band gap with near Eu contents of BFO films would generate an interfacial layer with a homogeneous gradient component, which should favor the switching of ferroelectric domains. The results show that the remanent polarization improved by 17 % to 86.2 μC/cm2 while the band gap has also improved. Intriguingly, the short-circuit current density (Jsc) and open circuit (Voc) of the photovoltaic signal of the optimal films are 89.0 nA and 0.412 V, respectively. This provides a simple and intelligent way to design the ferroelectric-photoelectric thin films and lays the foundation for optical information storage devices. |
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| Keywords: | Ferroelectric thin films Interfacial design Optical property Remanent polarization |
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