Structure,microstructure and disorder in low temperature chemical vapor deposited SiC coatings |
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| Affiliation: | 1. Laboratoire des Composites Thermostructuraux, CNRS, Univ. Bordeaux, Safran Ceramics, CEA, 3, allée de La Boétie, 33600 Pessac, France;2. Safran Ceramics, 105 avenue Marcel Dassault, 33700 Merignac, France;3. Dassault Aviation, 54 avenue Marcel Dassault, 33700 Mérignac, France;4. Air Liquide Paris, Innovation Campus, 781350 Les Loges en Josas, France;5. ArianeGroup, 3 Rue de Touban, 33185 Le Haillan, France;1. Functional Materials and Acousto-optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China;2. Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China;3. School of Physics and Electronic Engineering, Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150025, China;1. Department of Material Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333000, China;2. National Engineering Research Center for Domestic & Builing Ceramics, Jingdezhen Ceramic University, Jingdezhen 333000, China;3. Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;1. State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China;2. Hubei Longzhong Laboratory, Xiangyang 441000, Hubei, China;1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, Taiwan;2. Hocheng Corporation, Yingge District, New Taipei City, Taiwan;3. National Chung-Shan Institute of Science & Technology, Dual-Use Technology Development Center, Longtan District, Taoyuan City, Taiwan;1. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;2. Hebei Key Laboratory of Boron Nitride Micro- and Nano-Materials, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | Chemical vapor deposited SiC coatings were investigated at different scales by X-Ray diffraction, Raman microspectroscopy and transmission electron microscopy. They were prepared under specific conditions explaining the various (micro)structures obtained. The deposits all have a columnar morphology with a preferential orientation and a faulted cubic structure. They differ in how disorder is incorporated in the structure. Fine XRD analyses and stacking fault density assessment by TEM revealed the one-dimensionally-disordered (ODD) polytype in the < 111 > textured coatings. The frequency and spatial distribution of stacking faults vary and sometimes locally generate periodic alpha sequences. A specific type of disorder was also identified where {111} planes are arranged parallel to the growth direction within the columns. These disorders, more energetic than stacking faults, induce multiple and particularly large Raman modes. Crystal distortions, such as dislocations, are localized at the ODD domain boundaries, which are frequently interrupted as they extend during the growth. |
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| Keywords: | Silicon carbide Chemical vapor deposition Structure Raman spectroscopy Transmission electron microscopy |
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