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Structural, photoluminescent and electrical properties of CdTe films with different compositions fabricated by CMBD |
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| Authors: | T.M. Razykov G. Contreras-Puente G.C. Chornokur M. Dybjec Yu. Emirov B. Ergashev A. Hubbimov K.M. Kouchkarov D. Morel S. Ostapenko E. Sanchez-Meza E. Stefanakos H.M. Upadhyaya O. Vigil-Galan Yu.V. Vorobiev |
| Affiliation: | a Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, G.Mavlyanov Street 2B, Tashkent 700084, Uzbekistan b Department of Physics and Mathematics, IPN, Av. IPN S/N, Col. Zacatenko 07738, Mexico c University of South Florida, 4202 E. Fowler Ave., ENB 0118 Tampa, FL 33620, USA d Centro de Investigación en Energía, Universidad Nacional Autónoma de México, 62580 Temixco, Morelos, Mexico e CREST, Loughborough Univerisity, Leicestershire LE11 3TU, UK f CINVESTAV, IPN, Libramiento Norponiente 2000, Fracc, Real de Juriquilla, Queretaro 76230, Mexico |
| Abstract: | CdTe films with different compositions (Cd-rich, Te-rich and stoichiometric) were fabricated by a novel and low cost chemical molecular beam deposition method (CMBD) in atmospheric pressure hydrogen flow. Cd and Te granules were used as precursors. The films were deposited on ceramic (SiO2:Al2O3) substrates at 580 °C and 600 °C. The growth rate was varied in the range of 9-30 Å/s. The composition (Cd/Te) of the samples was changed by controlling the molecular beam intensity (MBI) ratio. Three samples fabricated at MBI ratios Cd/Te = 0.5, 1.0 and 1.16 were investigated by XRD, AFM, EDX, SEM, photoluminescence (PL) and Hall methods. |
| Keywords: | CdTe Photoluminescence Resistivity Chemical molecular beam deposition Thin film |
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