High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94GHz |
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| Authors: | Couch N.R. Spooner H. Beton P.H. Kelly M.J. Lee M.E. Rees P.K. Kerr T.M. |
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| Affiliation: | GEC Hirst Res. Centre, Wembley; |
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| Abstract: | The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed |
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