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Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells |
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| Authors: | M Y?lmaz N Balkan B Ulug M Sopanen M Mattila A Arnoult |
| Affiliation: | a Faculty of Arts and Science, Department of Physics, Akdeniz University, Antalya, Turkey b Department of Computing and Electronic Systems, University of Essex, Colchester, UK c Optoelect. Lab., Helsinki University of Technology, POB 3500, Helsinki 02015, Finland d LAAS, 7 avenue du Colonel Roche, 31077 Toulouse Cedex 4, France |
| Abstract: | Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material. |
| Keywords: | Photoluminescence GaInNAs/GaAs QWs Modulation doping |
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