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Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE |
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| Authors: | Jan Vani&scaron ,Ji?í Zelinka,Mohamed Henini,Karel Melichar,Filip &Scaron roubek |
| Affiliation: | a Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, v.v.i., Chaberská 57, 18251 Prague 8, Czech Republic b Department of Physics, University of Nottingham, Nottingham NG7 2RD, UK c Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Cukrovarnická 10, 16253 Prague 6, Czech Republic d Institute of Information Theory and Automation, Academy of Sciences of the Czech Republic, v.v.i., Pod vodárenskou vě?í 4, 18208 Prague 8, Czech Republic |
| Abstract: | Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed. |
| Keywords: | Quantum dot Ballistic electron emission spectroscopy |
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