|
|||||
|
|
The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique |
|
| Authors: | T. Krajewski E. Guziewicz L. Wachnicki I.A. Kowalik M. Lukasiewicz V. Osinniy |
| Affiliation: | a Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland b Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszyński University, ul. Dewajtis 5, 01-815 Warsaw, Poland c Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland |
| Abstract: | In this paper we report on the low-temperature growth (Ts=30-250 °C) of zinc oxide thin films by atomic layer deposition method using two different organic zinc precursors: diethylzinc and (for comparison) dimethylzinc, and deionized water as an oxygen precursor. An evident influence of growth temperature and precursors’ doses on electron concentration and Hall mobility of obtained zinc oxide layers is presented. The lowest achieved room-temperature electron concentration was at the level of 1016 cm−3 with mobility up to 110 cm2/V s. |
| Keywords: | Zinc oxide Atomic layer deposition Free carrier concentration Hall mobility |
| 本文献已被 ScienceDirect 等数据库收录！ | |