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Effect of annealing on Zn1−xCoxO thin films prepared by electrodeposition
Authors:A. El Manouni,M. Tortosa,M. Mollar,J.F. Sá  nchez-Royo
Affiliation:a Departament de Física Aplicada—ETSED, Universitat Politècnica de València, Camí de Vera, s/n, 46022 València, Spain
b Departament de Physique, Faculté des Sciences et Techniques, Université Hassan II, Mohammedia, Morocco
c Departament de Física Aplicada—ICMUV, Universitat de València, C/Dr. Moliner 50, 46100 Burjassot, València, Spain
Abstract:Polycrystalline thin films of Zn1−xCoxO with different cobalt (Co) content were grown on indium tin oxide (ITO) substrates by cathodic electrodeposition technique and subsequently annealed in air at 400 °C. The effect of annealing in their structural, optical and chemical properties has been characterized by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman scattering and optical spectroscopy. Our measurements indicate that moderate annealing increases the crystal quality of the films. The films are highly transparent in the visible range and evidence an increase of the band gap and of the intensity of three typical Co absorption bands in the visible with the amount of Co. Thermal annealing produces an increase of the intensity of the Co2+-related absorption bands revealing that higher amount of Co atoms are occupying Zn sites.
Keywords:Diluted magnetic semiconductors   Zinc oxide   Electrodeposition
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