InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications |
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| Authors: | P.J. Carrington,V.A. Solov&rsquo ev,Q. Zhuang,A. Krier |
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| Affiliation: | a Physics Department, Lancaster University, Lancaster LA1 4YB, UK
b Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia |
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| Abstract: | We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. |
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| Keywords: | Mid-infrared InSb quantum dots Light emitting diodes Molecular beam epitaxy |
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