Optimization of the annealing process and nanoscale piezoelectric properties of (002) AlN thin films |
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Authors: | Bangran Fu Fang Wang Rongrong Cao Yemei Han Yinping Miao Yulin Feng Fuliang Xiao Kailiang Zhang |
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Affiliation: | 1.School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices,Tianjin University of Technology,Tianjin,China |
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Abstract: | In this paper, the effects of different annealing processes on the texture, surface morphology, and piezoelectric properties of aluminum nitride (AlN) thin films and the performance of AlN-based surface acoustic wave (SAW) devices were systematically investigated. Based on the crystallinity and the morphology results, it is evident that in-situ annealing method is superior to ex-situ annealing. For the AlN thin films, the crystallization and piezoelectricity were both enhanced and then receded as the annealing temperature increased from 300 to 600?°C. We demonstrated that good (002) orientation, excellent grain distribution and high relative piezoelectric coefficient of the AlN thin films were achieved via in-situ annealing at 500?°C. Meanwhile, the AlN thin films exhibited excellent polarization properties and polarization maintaining characteristics. Additionally, the uniform interdigital transducer (IDT) with 8 μm period (finger width?=?2 μm) were designed and the IDT/AlN/SiO2/Si SAW devices with the center frequency f 0 of 495 MHz and insert loss of ?24.1 dB were fabricated. |
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