Effect of device processing on 1/f noise in uncooled, auger-suppressed CdHgTe diodes |
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Authors: | C L Jones N E Metcalfe A Best R Catchpole C D Maxey N T Gordon R S Hall T Colin T Skauli |
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Affiliation: | (1) GEC-Marconi Infra-Red Ltd., SO15 0EG Southampton, UK;(2) Defense Evaluation Research Agency, WR14 3PS Malvern, UK;(3) Norwegian Defense Research Establishment, Kjeller, Norway |
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Abstract: | Auger suppression reduces the leakage current in uncooled CdHgTe diodes to the point where the shot noise limited D* is significantly
higher than for other uncooled detectors. However, Auger-suppressed diodes exhibit high levels of 1/f noise and so applications
have initially been in devices operating at high frequency such as CO2 laser heterodyne detectors. In order to use Auger suppression in imaging devices, we need to reduce the 1/f noise and this
paper describes a study of the effects of device processing on noise. We find that although some of the noise is associated
with perimeter leakage currents, variations in the surface passivation treatment have little effect on the total noise. However,
a post-passivation anneal can reduce the noise in some cases. We also find that CdTe passivated devices are more stable when
baked than those passivated with ZnS. |
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Keywords: | 1/f noise Auger suppression infrared detectors MCT |
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