| Abstract: | The lifetime degradation induced by light illumination or carrier injection which is observed in Czochralski-grown silicon (Cz-Si) leads to a significant decrease of solar cell efficiency. Thus, the reduction of this effect has a high potential for the improvement of Cz-Si solar cells. In the present work both, the analysis of the underlying defect and its technological reduction are discussed. A clear correlation of the Cz-specific metastable defect with the oxygen and boron concentration in Cz-Si has been observed. Especially, recently performed lifetime measurements on oxygen-free boron-doped p-type MCz silicon and gallium-doped oxygen-contaminated Cz-silicon, both of which show no degradation, confirm this hypothesis. While the quantitative correlation between the defect concentration and boron is linear, the increase of the defect concentration induced by the interstitial oxygen concentration is superlinear, i.e. it follows a potential law of power approximately 5. Beyond the defect analysis, two different ways to reduce the metastable defect concentration are discussed. A proper material choice by substituting or reducing one of the major components of the metastable defect can completely avoid the degradation effect. The excellent performance of oxygen-free MCz-Si and gallium-doped Cz-Si is reflected in the achieved record efficiencies of 22.7% and 22.5%, respectively. In standard boron-doped oxygen-contaminated p-type Cz-Si a strong reduction of the metastable defect concentration can be achieved by a high-temperature process step resulting in an improvement of the stable bulk lifetime by a factor of 2–4. |
