| 宽势阱半导体光电器件研究 |
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| 引用本文： | 陈钟谋,桂德成,朱健,钱辉作. 宽势阱半导体光电器件研究[J]. 固体电子学研究与进展, 2000, 20(2): 195-199 |
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| 作者姓名： | 陈钟谋 桂德成 朱健 钱辉作 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 基金项目： | 国家自然科学基金资助项目 !(编号 :6 92 76 0 2 7) |
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| 摘 要： | 设计了一种新型宽势阱光电探测器件。介绍了该器件的结构形式、电流传输机制以及隧道效应和偏压对器件光探测灵敏度的影响。当器件光敏面积为 4 mm2 时 ,在光源测试条件为 :2 856 ,1 90 0 0 lx下 ,光电流达 0 .6 m A,加 1 .5 V反偏时达 2 4 m A,灵敏度分别为 2 .9A/ W及1 1 9A/ W。
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| 关 键 词： | 宽势阱光电器件 少子库 势垒高度 隧道效应 |
| 修稿时间： | 1998-07-15 |
Research of the Wide Barrier Photoelectric Device |
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| Chen Zhongmou Gui Decheng Zhu Jian Qian Huizuo. Research of the Wide Barrier Photoelectric Device[J]. Research & Progress of Solid State Electronics, 2000, 20(2): 195-199 |
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| Authors: | Chen Zhongmou Gui Decheng Zhu Jian Qian Huizuo |
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| Abstract: | A new wide barrier photoelectric device and its structure are described. The current transport mechanism and the influences of tunnel effect and bias to the device photo sensitivity are analyzed. With 4 mm 2 sensitive area of deveice, under 2 856 , 19 000 lx illumination, the photo current reaches 0.6 mA, and reaches 24 mA when applying 15 V of reverse bias, hereby the sensitivity is corresponding to 2.9 A/W and 119 A/W respectively. |
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| Keywords: | wide barrier photoelectric device minority carriers storehouse potential barrier tunnel effect |
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