Robust hydrogen generation over layered crystalline silicon materials via integrated H2 evolution routes |
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| Affiliation: | 1. Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, Tianjin 300384, China;1. School of Chemistry and Chemical Engineering, Key Laboratory of Electrochemical Energy Conversion Technology and Application, North Minzu University, Yinchuan, 750021, PR China;2. Key Laboratory of Chemical Engineering and Technology, State Ethnic Affairs Commission, North Minzu University, Yinchuan, 750021, PR China;3. Ningxia Key Laboratory of Solar Chemical Conversion Technology, North Minzu University, Yinchuan, 750021, PR China;1. School of Civil and Environmental Engineering, Yonsei University, Seoul, 03722, Republic of Korea;2. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam;3. Institute of Chemistry, Bioscience and Environmental Engineering, Faculty of Science and Technology, University of Stavanger, Box 8600 Forus, Stavanger, 4036, Norway;4. CSIR-National Environmental Engineering Research Institute (NEERI), Nehru Marg, Nagpur, 440 020, India;5. Institute of Chemical and Environmental Process, JEONJIN ENTECH,.LTD, Busan, 46729, Republic of Korea;1. School of Public Administration, Zhengzhou University, Zhengzhou, 450001, China;2. Faculty of Electrical Engineering, Department of Energy, Politecnico di Milano, Milan, Italy;3. Department of Electrical Engineering, University of Bonab, Bonab, Iran;4. School of Business Administration, Henan University of Economics and Law, Zhengzhou, China;1. Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, PR China;2. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN37996, USA |
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| Abstract: | Hydrogen generation is the initial challenge in utilization of hydrogen energy. In this work, robust hydrogen generation with a high yield of 53,930 μmol g−1 is demonstrated over layered crystalline silicon material derived from topochemical reaction from CaSi2. The physicochemical properties of the resultant layered crystalline Si material before and after H2 generation are investigated in detail to illustrate the H2 generation mechanism. Integrated H2 evolution routes, including destruction of Si–H bonds, oxidation of Si–Si bonds (hydrolysis of Si) and photocatalytic splitting water, are revealed to be responsible for the robust H2 generation. This work delivers a facile route to synthesize layered crystalline Si material with promising H2 generation performance and gives a deeply insight into the H2 evolution mechanisms of Si-based materials. |
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| Keywords: | Layered crystalline silicon Hydrogen generation Si hydrolysis oxidation Si–H bonds Cleavage Photocatalytic splitting water |
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