基于SiC器件的大功率交错并联Buck电路

交错并联Buck电路能够以较低的开关频率实现高频输出,在与传统的Buck电路输出电流相同的情况下,输出的电流纹波减小,支路电流为主电路的1/2,从而减小了开关管和二极管的电流应力,在一定程度上可以提升电路效率。碳化硅(SiC)作为一种新型材料,可以在高压、大功率、高频、高温条件下应用。在大功率条件下把碳化硅和交错并联Buck电路结合起来,与硅(Si)器件进行对比,通过实验进行验证,结果证明SiC交错并联Buck电路的应用优势。

High-power Interleaving Buck Circuit Based on SiC Device

Interleaving Buck circuit can achieve high frequency output with low switching frequency, in the case of the same output current as the traditional Buck circuit, output current ripple decrease, the amplitude of branch current is half of the main circuit, so the current stress of the switching tube and the diode is reduced, the circuit efficiency can be promoted. As a new type of material, silicon carbide (SiC)can be used in high voltage, high power, high frequency and high temperature conditions.In this paper, Silicon carbide and interleaving parallel Buck circuits are combined under high power conditions, and are compared with silicon devices, verify by experiment, the results demonstrate the advantages of the SiC interleaving parallel Buck circuit.