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Flexible Electronics: Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide (Small 41/2016)
Authors:Tanmoy Das  Xiang Chen  Houk Jang  Il‐Kwon Oh  Hyungjun Kim  Jong‐Hyun Ahn
Affiliation:1. Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, Seodaemun‐gu, Seoul, South Korea;2. Nanodevice Laboratory, School of Electrical and Electronic Engineering, Yonsei University, Seodaemun‐gu, Seoul, South Korea
Abstract:
Keywords:CVD MoS2  flexible CMOS inverters  flexible electronics  single crystal Si NM
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