| 纳米Si薄膜的结构及压阻效应 |
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| 引用本文： | 何宇亮,林鸿溢,武旭辉,余明斌,于晓梅,王珩,李冲.纳米Si薄膜的结构及压阻效应[J].材料研究学报,1996,10(1):33-38. |
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| 作者姓名： | 何宇亮 林鸿溢 武旭辉 余明斌 于晓梅 王珩 李冲 |
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| 作者单位： | 北京航空航天大学非晶态物理与光信息研究室，北京理工大学电子工程系，西安交通大学电子工程系 |
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| 摘 要： | 使用ＨＲＥＭ及ＳＴＭ技术检测了纳米Ｓｉ薄膜的微结构，纳米Ｓｉ薄膜由大量的细微Ｓｉ晶粒以及大量的晶粒间界面区组成，这一特殊的结构造成纳米Ｓｉ薄膜具有较大的压阻效应及较高氢含量，本文分析讨论了薄膜微结构对其压阻效应的作用，并认为纳米Ｓｉ薄膜材料将是一种理想的传感器材料。
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| 关 键 词： | 压阻效应 微结构 简支梁法 硅薄膜 纳米硅薄膜 |
| 收稿时间： | 1996-02-25 |
| 修稿时间： | 1996-02-25 |
THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS |
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| HE Yuhang,WU Xuhui,LIN Hongyi,YU Mingbin,YU Xiaomei,WANG Heng,LI Chong.THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS[J].Chinese Journal of Materials Research,1996,10(1):33-38. |
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| Authors: | HE Yuhang WU Xuhui LIN Hongyi YU Mingbin YU Xiaomei WANG Heng LI Chong |
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| Affiliation: | HE Yuhang,WU Xuhui,LIN Hongyi,YU Mingbin,YU Xiaomei,WANG Heng,LI Chong (The Amorphous Physics Research Lab,BUAA Beijing,Dept. Of Electronic Engineering,Beijing Institute of Technology,Beijing ) |
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| Abstract: | In this report Authors employed the HREM and STM to detect the micro-structure of nc-Si:H films, which are fabricated by the PECVD deposition method. The nc-Si:H films are consisted with a mass of micro-grains and a great deal of interfaces among grains. The unique structrue character of nc-Si:H films is the main reason for the largest piezo-resistance effect and a higher value of hydrogen content in the films. The relationship of microstructure and the piezo-resistance effect of films were discussed. It is suggested that the nc-Si: H film may becbme an idealized sensor materials. |
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| Keywords: | an-rystalline silicon film peizo-resistance effect micro-structure freely supported method |
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