Microwave noise modeling for InP-InGaAs HBTs |
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Authors: | Jianjun Gao Xiuping Li Hong Wang Boeck G |
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Affiliation: | Inst. of High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany; |
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Abstract: | Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5/spl times/5 /spl mu/m/sup 2/ emitter area over a wide range of bias points. |
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