| 一种新型高速嵌入式动态随机存储器 |
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| 引用本文： | 臧松干,王鹏飞,林曦,刘昕彦,丁士进,张卫.一种新型高速嵌入式动态随机存储器[J].微电子学,2012,42(1):50-53. |
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| 作者姓名： | 臧松干 王鹏飞 林曦 刘昕彦 丁士进 张卫 |
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| 作者单位： | 复旦大学专用集成电路和系统国家重点实验室;复旦大学微电子学系,上海200433 |
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| 摘 要： | 基于二维器件模拟工具,研究了一种采用栅控二极管作为写操作单元的新型平面无电容动态随机存储器.该器件由一个n型浮栅MOSFET和一个栅控二极管组成.MOSFET的p型掺杂多晶硅浮栅作为栅控二极管的p型掺杂区,同时也是电荷存储单元.写“0”操作通过正向偏置二极管实现,而写“1”操作通过反向偏置二极管,同时在控制栅上加负电压使栅控二极管工作为隧穿场效应晶体管(Tunneling FET)来实现.由于正向偏置二极管和隧穿晶体管开启时接近1μA/μm的电流密度,实现了高速写操作过程,而且该器件的制造工艺与闪烁存储器和逻辑器件的制造兼容,因此适合在片上系统(SOC)中作为嵌入式动态随机存储器使用.
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| 关 键 词： | 嵌入式动态随机存储器 栅控二极管 隧穿场效应晶体管 |
Design of a Novel High Speed Embedded DRAM |
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| ZANG Songgan
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WANG Pengfei
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LIN Xi
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LIU Xinyan
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DING Shijin
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ZHANG Wei.Design of a Novel High Speed Embedded DRAM[J].Microelectronics,2012,42(1):50-53. |
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| Authors: | ZANG Songgan WANG Pengfei LIN Xi LIU Xinyan DING Shijin ZHANG Wei |
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| Affiliation: | (State Key Laboratory of ASIC and System,Dept.of Microelectronics,Fudan University,Shanghai 200433,P.R.China) |
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| Abstract: | A novel high speed capacitorless dynamic-random-access-memory(DRAM) with gated diode as its writing cell was proposed and investigated.This memory cell consisted of an n-type floating gate metal-oxide-semiconductor field effect transistor(MOSFET) and a gated diode.The p-type floating gate poly of n-type MOSFET functioned as p-type doping region of the gated diode,and also as the charge storing unit.The write "0" operation was executed by forwardly biasing the diode,and the write "1" operation was executed by driving the gated diode to work in a tunneling field effect transistor(TFET) mode.In both circumstances,their active current density could be around 1 μA/μm,and so a high-speed programming operation was realized.The memory cell could be used as an embedded DRAM in SOC,since its fabrication process was compatible with that of flash memory and logic device. |
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| Keywords: | Embedded-DRAM Gated diode Tunneling FET(TFET) |
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