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| 双极型晶体管电流增益的温度特性研究 | |
| 引用本文： | 何建,徐学良,王健安,李吉,李泽宏,张金平,任敏. 双极型晶体管电流增益的温度特性研究[J]. 微电子学, 2012, 42(2): 270-272,276 |
| 作者姓名： | 何建 徐学良 王健安 李吉 李泽宏 张金平 任敏 |
| 作者单位： | 1. 中国民航飞行学院,四川广汉,618307 2. 中国电子科技集团公司 第二十四研究所,重庆,400060 3. 电子科技大学 电子薄膜与集成器件国家重点实验室,成都,610054 |
| 摘 要： | 分析了大注入效应对双极型晶体管电流增益温度特性的影响,建立了双极型晶体管电流增益温度解析模型。选取产品3DD167来进行不同温度不同工作条件下的测试分析。实验结果表明,在特定工作条件下,该器件在不同温度时其电流增益都有一个零温度点。实验结果和模型吻合较好。 |
| 关 键 词： | 双极晶体管 正温度系数 大注入 电流增益 |
Study on Temperature Effects on Current Gain of Bipolar Transistor |
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| HE Jian , XU Xueliang , WANG Jian'an , LI Ji , LI Zehong , ZHANG Jinping , REN Min. Study on Temperature Effects on Current Gain of Bipolar Transistor[J]. Microelectronics, 2012, 42(2): 270-272,276 | |
| Authors: | HE Jian XU Xueliang WANG Jian'an LI Ji LI Zehong ZHANG Jinping REN Min |
| Affiliation: | 1.Civil Aviation Flight University of China,Guanghan,Sichuan 618307,P.R.China;2.Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corporation,Chongqing 400060,P.R.China;3. State Key Lab of Electronic Thin Films and Inttegrated Devices,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China) |
| Abstract: | Effects of high level injection on temperature characteristics of bipolar transistor current gain were investigated,and analytic thermal model of bipolar transistor current gain was established.Product 3DD167 was tested and analyzed under various temperatures and working conditions.Experimental results,which were in good agreement with the model,showed that there was a zero temperature point for current gain at different temperatures under certain working conditions. |
| Keywords: | Bipolar transistor Positive temperature coefficient High level injection Current gain |
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