| 一种瞬态响应增强的片上LDO系统设计 |
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| 引用本文： | 胡佳俊,陈后鹏,王倩,蔡道林,宋志棠.一种瞬态响应增强的片上LDO系统设计[J].微电子学,2012,42(3):376-379. |
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| 作者姓名： | 胡佳俊 陈后鹏 王倩 蔡道林 宋志棠 |
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| 作者单位： | 中国科学院 上海微系统与信息技术研究所 信息功能材料国家重点实验室 纳米技术研究室,上海,200050 |
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| 基金项目： | 国家集成电路重大专项，国家重点基础研究发展计划基金资助项目，国家自然科学基金资助项目，上海市科委资助项目 |
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| 摘 要： | 分析了传统LDO提高系统稳定性及瞬态响应的局限性,提出了一种片内集成补偿技术。该技术无需外挂电容和等效串联电阻(ESR),即可使系统在全负载范围内保持稳定,并具有良好的纹波抑制能力。仿真结果表明,系统空载时静态电流为46μA,且能提供200mA的最大负载电流,低频电源抑制比达到-65.6dB,启动时间只有16μs,在输出电容为10pF、负载电流以200mA/2μs突变时,最大下冲电压为120mV,上冲电压为160mV。
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| 关 键 词： | LDO 瞬态响应 相位裕度 |
Design of On-Chip LDO System with Enhanced Transient Response |
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| HU Jiajun
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CHEN Houpeng
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WANG Qian
,
CAI Daoling
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SONG Zhitang.Design of On-Chip LDO System with Enhanced Transient Response[J].Microelectronics,2012,42(3):376-379. |
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| Authors: | HU Jiajun CHEN Houpeng WANG Qian CAI Daoling SONG Zhitang |
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| Affiliation: | (Laboratory of Nanotechnology,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-System and Information Technology,The Chinese Academy of Sciences,Shanghai 200050,P.R.China) |
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| Abstract: | Stability and transient response enhancement limit of traditional LDO system was analyzed,and a frequency compensation technique for on-chip LDO was presented.With the proposed method,not only stability within a wide range of load variation could be achieved,but also a good ripple rejection would be obtained,without off-chip capacitor and equivalent series resistors.Simulation results showed that the proposed circuit,which dissipated only 46 μA of quiescent current for empty load and was capable of delivering load current up to 200 mA,had a PSRR of about-65.6 dB at low frequency,a system start-up time of only 16 μs,a maximum undershoot of 160 mV and a maximum overshoot of 120 mV for an output capacitance of 10 pF at a load step of 200 mA/2 μs. |
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| Keywords: | LDO Transient response Phase margin |
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