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一种分段温度补偿BiCMOS带隙基准源
引用本文:丁大胜,徐世六,王永禄,汤洁,李思颖. 一种分段温度补偿BiCMOS带隙基准源[J]. 微电子学, 2012, 42(3): 340-343
作者姓名:丁大胜  徐世六  王永禄  汤洁  李思颖
作者单位:1. 重庆大学,重庆400044;模拟集成电路重点实验室,重庆400060
2. 模拟集成电路重点实验室,重庆,400060
3. 模拟集成电路重点实验室,重庆400060;重庆邮电大学,重庆400065
摘    要:设计了一种针对基准电压输出非线性的分段温度补偿电压基准源。该电路在基准源工作的低温和高温阶段对输出进行温度补偿,实现低温度系数。利用高增益的两级运算放大器以及增加PMOS管的栅长来提高电路的电源抑制比(PSRR)。在-55℃~125℃范围内,温度系数为2.9×10-6/℃,低频电源抑制比为-71dB。

关 键 词:带隙基准源  分段曲率补偿  温度系数  电源抑制比

A BiCMOS Bandgap Reference Based on Piecewise Temperature Curvature Compensation
DING Dasheng , XU Shiliu , WANG Yonglu , TANG Jie , LI Siying. A BiCMOS Bandgap Reference Based on Piecewise Temperature Curvature Compensation[J]. Microelectronics, 2012, 42(3): 340-343
Authors:DING Dasheng    XU Shiliu    WANG Yonglu    TANG Jie    LI Siying
Affiliation:2,3(1.Chongqing University,Chongqing 400044,P.R.China; 2.Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,P.R.China; 3.Chongqing University of Post and Telecommunications,Chongqing 400065,P.R.China)
Abstract:A new piecewise curvature compensated voltage reference circuit was designed to solve the problem of non-linear output of bandgap reference.In this circuit,compensation was made at low and high operating temperatures,respectively,to achieve low temperature coefficient.A high gain 2-stage operational amplifier and PMOSFET with extended gate were used to improve PSRR.Simulation results showed that the circuit achieved a temperature coefficient of 2.9 ×10-6/℃ over the temperature range from-55 ℃ to 125 ℃,and a PSRR of-71 dB at low frequency.
Keywords:Bandgap reference source  Piecewise curvature compensation  Temperature coefficient  PSRR
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