| 一种提高ESD性能的高压SBD器件结构研究 |
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| 引用本文： | 钟怡,许国磊,欧宏旗,义岚,刘嵘侃. 一种提高ESD性能的高压SBD器件结构研究[J]. 微电子学, 2012, 42(2): 273-276 |
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| 作者姓名： | 钟怡 许国磊 欧宏旗 义岚 刘嵘侃 |
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| 作者单位： | 1. 中科渝芯电子有限公司,重庆401332;中国电子科技集团公司 第二十四研究所,重庆400060
2. 中科渝芯电子有限公司,重庆,401332 |
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| 摘 要： | 提出了一种新型SBD器件结构,并应用于高压SBD产品的研制。该结构通过在肖特基势垒区的硅表面增加一层表面缓冲掺杂层(Improved Surface Buffer Dope),将高压SBD的击穿点从常规结构的PN结保护环区域转移到平坦的肖特基势垒区,从根本上提高了器件的反向静电放电(ESD)和浪涌冲击能力。经流片验证,采用该结构的10A150VSBD产品和10A200VSBD产品均通过了反向静电放电(HBM模式)8kV的考核,达到目前业界领先水平。该结构工艺实现简单,可以应用于100V以上SBD的批量生产。
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| 关 键 词： | 肖基势垒二极管 静电放电 可靠性 |
Study on High Voltage SBD with Improved ESD Performance |
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| ZHONG Yi , XU Guolei , OU Hongqi , YI Lan , LIU Rongkan. Study on High Voltage SBD with Improved ESD Performance[J]. Microelectronics, 2012, 42(2): 273-276 |
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| Authors: | ZHONG Yi XU Guolei OU Hongqi YI Lan LIU Rongkan |
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| Affiliation: | 1,2(1.Chongqing Semi-Chip Electronics Co.,Ltd,Chongqing 401332,P.R.China; 2.Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,P.R.China) |
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| Abstract: | A novel device structure was proposed for high voltage Schottky barrier diode(SBD).An improved buffer layer was doped into silicon surface of the Schottky barrier to shift breakdown point of high voltage SBD from PN junction of conventional protecting ring to flat Schottky barrier area,which improved reverse ESD and anti-surge-impulse performances of the device.10 A /150 V and 10 A/200 V SBD products using the novel structure were fabricated,which passed 8 kV reverse ESD(HBM) test.Featuring simple fabrication process,the new structure could be used for volume production of SBD’s above 100 V. |
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| Keywords: | Schottky barrier diode(SBD) ESD Reliability |
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