| Beryllium Surface Modified by B Ion Implantation |
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| 引用本文： | 胡仁元,杨玉石. Beryllium Surface Modified by B Ion Implantation[J]. 材料科学技术学报, 1989, 5(3): 161-163 |
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| 作者姓名： | 胡仁元 杨玉石 |
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| 作者单位： | Institute of Low Energy Physics Beijing Normal University，China，Beijing Research Institute of Materials and Technology，China |
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| 摘 要： | Beryllium is implanted with 100 keV,2×10~(17) B/cm~2 and post-implanted sample isannealed at 650℃ for 1 h.Hardness measurementindicates that the hardness increases withimplantation and can further be modified bypost-implantation heat treatment.Profile measurement shows that implantationcauses contamination on the surface of beryllium.During annealing boron diffuses out of berylliumand carbon on surface diffuses into beryllium.Beryllium surface is modified by compositionchange and carbide formation.
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| 收稿时间： | 1989-05-28 |
Beryllium Surface Modified by B Ion Implantation |
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| HU Renyuan YANG Yushi Institute of Low Energy Physics,Beijing Normal University,China. Beryllium Surface Modified by B Ion Implantation[J]. Journal of Materials Science & Technology, 1989, 5(3): 161-163 |
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| Authors: | HU Renyuan YANG Yushi Institute of Low Energy Physics Beijing Normal University China |
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| Affiliation: | HU Renyuan YANG Yushi Institute of Low Energy Physics,Beijing Normal University,China. Beijing Research Institute of Materials and Technology,China. |
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| Abstract: | Beryllium is implanted with 100 keV, 2×10~(17) B/cm~2 and post-implanted sample is annealed at 650℃ for 1 h.Hardness measurement indicates that the hardness increases with implantation and can further be modified by post-implantation heat treatment. Profile measurement shows that implantation causes contamination on the surface of beryllium. During annealing boron diffuses out of beryllium and carbon on surface diffuses into beryllium. Beryllium surface is modified by composition change and carbide formation. |
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| Keywords: | ion implantation beryllium diffusion |
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