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InGaAs-GaAs quantum-dot lasers
Authors:Bimberg  D Kirstaedter  N Ledentsov  NN Alferov  ZhI Kop'ev  PS Ustinov  VM
Affiliation:Tech. Univ. Berlin;
Abstract:Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states. Record threshold current densities of 40 A·cm -2 at 77 K and of 62 A·cm-2 at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of ~80 %. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to ~50 meV, ultrahigh material gain of ~105 cm-1, differential gain of ~10-13 cm2 and strong nonlinear gain effects with a gain compression coefficient of ~10-16 cm3. The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states. The linewidth enhancement factor is ~0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 μm and 1.37 μm at 300 K
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