| 集成电路互连引线电迁移的研究进展 |
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| 引用本文： | 吴丰顺,张金松,吴懿平,郑宗林,王磊,谯锴.集成电路互连引线电迁移的研究进展[J].半导体技术,2004,29(9):15-21,38. |
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| 作者姓名： | 吴丰顺 张金松 吴懿平 郑宗林 王磊 谯锴 |
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| 作者单位： | 华中科技大学塑性成形模拟及模具技术国家实验室;华中科技大学微系统研究中心,武汉,430074;华中科技大学塑性成形模拟及模具技术国家实验室,武汉,430074 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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中港自然科学基金
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香港研究资助局资助项目 |
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| 摘 要： | 随着大规模集成电路的不断发展,电迁移引起的集成电路可靠性问题日益凸现.本文介绍了电迁移的基本理论,综述了集成电路互连引线电迁移的研究进展.研究表明,互连引线的尺寸、形状和微观组织结构对电迁移有重要影响;温度、电流密度、应力梯度、合金元素及工作电流模式等也对电迁移寿命有重要影响.同时指出了电迁移研究亟待解决的问题.
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| 关 键 词： | 大规模集成电路 电迁移 互连引线 |
| 文章编号： | 1003-353X(2004)09-0015-07 |
Progress of Electromigration in IC Interconnect Metallic Line |
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| WU Feng-shuna,b,ZHANG Jing-songa,WU Yi-pinga,b,ZHENG Zong-lina,WANG Lei,QIAO Kaia.Progress of Electromigration in IC Interconnect Metallic Line[J].Semiconductor Technology,2004,29(9):15-21,38. |
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| Authors: | WU Feng-shuna b ZHANG Jing-songa WU Yi-pinga b ZHENG Zong-lina WANG Lei QIAO Kaia |
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| Affiliation: | WU Feng-shuna,b,ZHANG Jing-songa,WU Yi-pinga,b,ZHENG Zong-lina,WANG Lei1,QIAO Kai1a |
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| Abstract: | With the development of large-scale integrated circuits, the reliability caused byelectromigration becomes a key issue. The fundamental of electromigration is introduced. The recentprogress in research on electromigration is overviewed. The results show that the size, shape andmicrostructure of interconnect metallic line play an important role in the process of electromigration.Also the temperature, current density, stress gradient and alloy elements have strongly effects onMTF (mean time to failure) of electromigration. Finally, the imminent issues of electromigration havebeen presented. |
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| Keywords: | large-scale integrated circuits electromigration (EM) interconnect metallic line |
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