Highly oriented diamond growth on SixGe1−x (100) thin films

Highly oriented (100) diamond films have been successfully grown on Si_xGe_1−x (100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm⁻¹ peak which proves the formation of diamond. Diamond nucleation density on Si_xGe_1−x substrate estimated by scanning electron microscopy is higher than 10⁹ cm⁻². The interface between diamond and Si_xGe_1−x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the Si_xGe_1−x film was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on Si_xGe_1−x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on Si_xGe_1−x with {111} interplanar spacing ratio of diamond and Si_xGe_1−x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth.