| 热应力影响下SCSP器件的界面分层 |
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| 引用本文： | 李功科,秦连城,易福熙.热应力影响下SCSP器件的界面分层[J].电子元件与材料,2008,27(10). |
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| 作者姓名： | 李功科 秦连城 易福熙 |
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| 作者单位： | 桂林电子科技大学,机电工程学院,广西,桂林,541004 |
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| 摘 要： | 通过有限元方法研究了堆叠芯片尺寸封装(SCSP)器件在回流焊工艺过程中的热应力分布,采用修正J积分方法计算其热应力集中处应变能释放率。结果表明:堆叠封装器件中最大热应力出现在Die3芯片悬置端。J积分最大值出现在位于Die3芯片的上沿与芯片粘结剂结合部,达到1.35×10–2J/mm2,表明该位置的裂纹处于不稳定状态;在Die3芯片下缘的节点18,19和顶层节点27三个连接处的J积分值为负值,说明该三处裂纹相对稳定,而不会开裂处于挤压状态。
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| 关 键 词： | 电子技术 SCSP器件 修正J积分 界面分层 热应力 |
Interface delamination of SCSP device in thermal stress influence |
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| LI Gong-ke,QIN Lian-cheng,YI Fu-xi.Interface delamination of SCSP device in thermal stress influence[J].Electronic Components & Materials,2008,27(10). |
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| Authors: | LI Gong-ke QIN Lian-cheng YI Fu-xi |
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| Affiliation: | LI Gong-ke,QIN Lian-cheng,YI Fu-xi (School of Mechanical , Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,Guangxi Zhuangzu Zizhiqu,China) |
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| Abstract: | The distribution of SCSP device's thermal stress during reflow soldering process was investigated through finite element method, and strain energy release rate of thermal stress concentration area was calculated by modified J integral method. Results show that maximum thermal stress of SCSP device appears in Die3 chip suspended tip. The maximum value of J integral locates the joint part of Die3 chip above verge and adhesive and arrives at 1.34 J/ m2, to show the crack in this location is unstable state. J i... |
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| Keywords: | electron technology SCSP device modified J integral interface delamination thermal stress |
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