Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm-3, 5×1017 cm-3, 2×1018 cm-3, 4×1018 cm-3 and 7×1018 cm-3 in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×1018 cm-3, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm-3 exhibits the highest conversion efficiency.