Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature |
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Authors: | Li Hai Yin Zongyou He Qiyuan Li Hong Huang Xiao Lu Gang Fam Derrick Wen Hui Tok Alfred Iing Yoong Zhang Qing Zhang Hua |
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Affiliation: | School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore. |
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Abstract: | Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. |
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Keywords: | MoS2 2D nanomaterials mechanical exfoliation field‐effect transistors gas sensors |
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