Growth of 4H silicon carbide crystals on a (11
\bar 2
2) seed |
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Authors: | A Yu Fadeev A O Lebedev Yu M Tairov |
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Affiliation: | 1. Saint Petersburg State Electrotechnical University “LETI”, ul. Prof. Popova 5, St.Petersburg, 197376, Russia 2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St.Petersburg, 194021, Russia
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Abstract: | The features of the defect structure of 4H silicon carbide ingots grown by the modified Lely method on (11 $ \bar 2 $ 2)-oriented seeds are studied. It is shown that this seed plane can be used to improve the structural quality of silicon carbide ingots. The defect structure of grown ingots features a complete lack of micropores and a decreased (by an order of magnitude) dislocation density in comparison with the seed. At the same time, growth on the (11 $ \bar 2 $ 2) seed results in stacking fault accumulation. The type of stacking faults corresponds to formula (5, 2) in the Zhdanov notation (internal Frank stacking fault). |
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Keywords: | |
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