Transformation of a SiC/por-SiC/TiO2 structure during rapid thermal annealing |
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| Authors: | R. V. Konakova O. F. Kolomys O. S. Lytvyn O. B. Okhrimenko V. V. Strelchuk A. M. Svetlichnyi L. G. Linets |
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| Affiliation: | 1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine
2. Taganrog Institute of Technology, Southern Federal University, Taganrog, 347928, Russia
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| Abstract: | The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/TiO2 structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of carbon compounds. An analysis of the spectra of photoluminescence excited by radiation with an energy lower than that of the band-gap energy in 6H-SiC has shown that the appearance of photoluminescence in porous silicon carbide is related to impurity states, which are formed at the surface due to products of chemical reactions in the course of etching. |
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