aEscuela Superior de Física y Matemáticas, IPN, Edif. 9 UPALM, México D.F. 07738, México
bDepartamento de Física, CINVESTAV, IPN, A.P. 14-740, México D. F. 07300, México
Abstract:
Quantum well (QW) structures of AlxGa1–xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.