| HFCVD法制备SiC材料及结构分析 |
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| 引用本文： | 王辉,汤正新,尤景汉,刘香茹,陈庆东.HFCVD法制备SiC材料及结构分析[J].长春理工大学学报,2008,31(2). |
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| 作者姓名： | 王辉 汤正新 尤景汉 刘香茹 陈庆东 |
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| 作者单位： | 河南科技大学,洛阳,471003;河南科技大学,洛阳,471003;河南科技大学,洛阳,471003;河南科技大学,洛阳,471003;河南科技大学,洛阳,471003 |
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| 基金项目： | 河南科技大学校科研和教改项目 |
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| 摘 要： | 采用热丝化学气相沉积(HFCVD)技术,以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上生长了晶态SiC薄膜.通过扫描电子显微镜(SEM)、X射线衍射(XRD)、傅立叶红外(FTIR)等分析手段对样品结构、组分进行了分析.实验结果表明所制备的样品为SiC晶体.
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| 关 键 词： | 碳化硅 HFCVD 晶体 |
Preparation and characterization of SiC Films Grown by HFCVD |
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| WANG Hui,TANG Zhengxin,YOU Jinghan,LIU Xiangru,CHEN Qingdong.Preparation and characterization of SiC Films Grown by HFCVD[J].Journal of Changchun University of Science and Technology,2008,31(2). |
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| Authors: | WANG Hui TANG Zhengxin YOU Jinghan LIU Xiangru CHEN Qingdong |
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| Affiliation: | WANG Hui,TANG Zhengxin,YOU Jinghan,LIU Xiangru,CHEN Qingdong(College of Science,Henan University of Science & Technology,Luoyang 471003) |
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| Abstract: | Nanocrystalline SiC films were deposited on Si(111)substrate by hot filament chemical vapor deposition(HFCVD)technique with CH4 and SiH4 as reaction gases.Scanning electron microscope(SEM),Fourier Transform Infrared Spectroscopy(FTIR),X-Ray Diffraction(XRD) were employed to analyze the composition and the structure of the films.The results show that the films deposited were crystalline SiC. |
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| Keywords: | SiC HFCVD crystalline |
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