Low-temperature growth of highly crystallized transparent conductive fluorine-doped tin oxide films by intermittent spray pyrolysis deposition

Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO₂:F films were grown on glass substrates at relatively low temperatures of 325–340°C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8×10⁻⁴ Ω cm and a high Hall mobility of 28 cm²/V s. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films’ transmittance and resistivity show little change after a 450°C 60 min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO₂:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures.