| Bulk single crystal growth of SiGe by PMCZ method |
| |
| 引用本文： | ZHANG Weilian,NIU Xinhuan,CHEN Hongjian,ZHANG Jianxin,SUN Junsheng,and ZHANG EnhuaiSemiconductor Material Institute,Hebei University of Technology,Tian jin 300130,China. Bulk single crystal growth of SiGe by PMCZ method[J]. 稀有金属(英文版), 2003, 22(3) |
| |
| 作者姓名： | ZHANG Weilian NIU Xinhuan CHEN Hongjian ZHANG Jianxin SUN Junsheng and ZHANG EnhuaiSemiconductor Material Institute Hebei University of Technology Tian jin 300130 China |
| |
| 作者单位： | ZHANG Weilian，NIU Xinhuan，CHEN Hongjian，ZHANG Jianxin，SUN Junsheng，and ZHANG EnhuaiSemiconductor Material Institute，Hebei University of Technology，Tian jin 300130，China |
| |
| 基金项目： | This work is financially supported by the National Natural Science Foundation of China (No. 59772037)，the Natural Science Foundation of Hebei Province (No. 500016) |
| |
| 摘 要： | A new type of magnetic device was used to replace the conventional electro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanent magnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed at radial 360? Using the ring permanent magnetic field, thermal convection in melt and centrifugal pumping flows due to crystal rotation could be strongly suppressed so that the fluctuations of temperature and micro-growth rate at solid/liquid interface could be restrained effectively. In the PMCZ condition, the growing environment of SiGe bulk single crystal was similar to the crystal growth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.) had been controlled by diffusion near the solid/liquid interface. Oxygen concentration became lower and the distribution of composition became more homogeneous along longitudinal direction and across a radial section in the grown SiGe crystal. The mechanism of PMCZ sup
|
Bulk single crystal growth of SiGe by PMCZ method |
| |
| Zhang Weilian,NIU Xinhuan,CHEN Hongjian,ZHANG Jianxin,SUN Junsheng,ZHANG Enhuai. Bulk single crystal growth of SiGe by PMCZ method[J]. Rare Metals, 2003, 22(3) |
| |
| Authors: | Zhang Weilian NIU Xinhuan CHEN Hongjian ZHANG Jianxin SUN Junsheng ZHANG Enhuai |
| |
| Abstract: | A new type of magnetic device was used to replace the conventional electro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanent magnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed at radial 360? Using the ring permanent magnetic field, thermal convection in melt and centrifugal pumping flows due to crystal rotation could be strongly suppressed so that the fluctuations of temperature and micro-growth rate at solid/liquid interface could be restrained effectively. In the PMCZ condition, the growing environment of SiGe bulk single crystal was similar to the crystal growth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.) had been controlled by diffusion near the solid/liquid interface. Oxygen concentration became lower and the distribution of composition became more homogeneous along longitudinal direction and across a radial section in the grown SiGe crystal. The mechanism of PMCZ superior to MCZ was also discussed. |
| |
| Keywords: | SiGe single crystal composition homogeneous PMCZ thermal convection crystal growth |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
