Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As |
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Authors: | Mulpuri V Rao Sadanand M Gulwadi Phillip E Thompson Ayub Fathimulla Olaleye A Aina |
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Affiliation: | (1) Department of Electrical and Computer Engineering, George Mason University, 22030 Fairfax, Virginia;(2) Naval Research Laboratory, 20375 Washington, D.C.;(3) Allied-Signal Aerospace Company, Aerospace Technology Center, 9140 Old Annapolis Road, 21045 Columbia, Maryland |
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Abstract: | Halogen lamp rapid thermal annealing was used to activate 100 keV Si and 50 keV Be implants in In0.53Ga0.47As for doses ranging between 5 × 1012−4 × 1014 cm−2. Anneals were performed at different temperatures and time durations. Close to one hundred percent activation was obtained
for the 4.1 × 1013 cm−2 Si-implant, using an 850° C/5 s anneal. Si in-diffusion was not observed for the rapid thermal annealing temperatures and
times used in this study. For the 5 × 1013 cm−2 Be-implant, a maximum activation of 56% was measured. Be-implant depth profiles matched closely with gaussian profiles predicted
by LSS theory for the 800° C/5 s anneals. Peak carrier concentrations of 1.7 × 1019 and 4 × 1018 cm−3 were achieved for the 4 × 1014 cm−2 Si and Be implants, respectively. For comparison, furnace anneals were also performed for all doses. |
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Keywords: | InGaAs implantation rapid thermal annealing (RTA) activation |
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