60-GHz noise performance of ion-implanted InxGa1-xAs MESFET's

The authors report the 60-GHz noise performance of low-noise ion-implanted In_xGa_1-xAs MESFETs with 0.25 μm T-shaped gates and amplifiers using these devices. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-state amplifier using these ion-implanted In_xGa_1-x As MESFETs achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% I _dss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFETs