Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

1 Introduction Silicon-on-insulator (SOI) technology possesses many advantages over bulk silicon technology such as the reduction of parasitic capacitance, excellent sub-threshold slope, elimination of latch up, and resis-tance to radiation.1] Hence, it is preferred for high-speed, high-temperature, and low-power micro-electronic devices. SOI MOS devices employ a thin layer of insulating material, usually made of silicon dioxide, to electrically insulate the device from the bulk of the sem…

Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions.