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Electrodeposition of CuInSe2 thin films in a glycine acid medium
Authors:R. Ugarte, R. Schrebler, R. C  rdova, E. A. Dalchiele,H. G  mez
Affiliation:

a Instituto de Química, Facultad de Ciencias, Universidad Austral de Chile, Valdivia, Chile,

b Instituto de Química, Facultad de Ciencias, Universidad Católica de Valparaíso, Casilla 4059, Valparaíso, Chile

c Instituto de Física, Facultad de Ingeniería, Herrera y Reissig 565, C.C. 30, 11000 Montevideo, Uruguay

Abstract:CuInSe2 polycrystalline thin films were potentiostatically electrodeposited on titanium and conducting glass substrates from an aqueous solution containing CuCl2, InCl3, SeO2 in a glycine acid medium, pH around 2 adjusted with HCl. The effect of adding EDTA as a complexing agent was also studied. These films were then submitted to different post-deposition treatments: annealing at temperatures up to about 400°C in an Ar flowing stream, chemical etching in a 0.5 M KCN solution and in some cases room temperature air oxidation. The as-grown and treated layers were characterized by X-ray energy dispersive analysis, X-ray diffraction, scanning electron microscopy and photoelectrochemical studies. Annealing improves the crystallinity of electrodeposited films and the effective grain size increased, resulting in the formation of CuInSe2 chalcopyrite structure. Photoelectrochemical measurements of the films revealed p-type behaviour, and better photoresponse was observed for the films obtained from EDTA based solutions. Room temperature air oxidation of the CuInSe2 films improves the photocurrent response.
Keywords:Electrochemical deposition   Semiconductors   X-ray diffraction   Photoelectrochemistry
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