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射频等离子体法在单晶硅衬底上形成的非晶碳膜及其性质
引用本文:程世昌,张辉,刘石柱,凌高宏. 射频等离子体法在单晶硅衬底上形成的非晶碳膜及其性质[J]. 核技术, 1987, 0(1)
作者姓名:程世昌  张辉  刘石柱  凌高宏
作者单位:武汉大学(程世昌,张辉,刘石柱),武汉大学(凌高宏)
摘    要:由离子和离子束技术形成的非晶碳膜具有良好的电绝缘性、对红外及可见光透明、硬度大、耐腐蚀等优良性质,可望在半导体器件、激光器件、太阳电池和材料保护等方面得到应用而受到重视。近年来很多作者先后报道了用未经质量分析的低能碳离子束直接沉积、离子束溅射沉积、离子镀、射频辉光放电离化碳氢化合物的等离子体沉积、经质量分析的低能碳离子束沉积等方法在单晶硅、玻璃、不锈钢等不同衬底上形成非晶碳膜的结果。碳膜的物理性质与沉积条件有密切关系,根据物理性质非晶碳膜大致可以分为三类,即导电、不透明的类石墨膜;绝缘、透明、质软的类聚合物膜;透明、绝缘、硬度大的类金刚石膜。

关 键 词:射频等离子体法  非晶碳膜

Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma
Cheng Shichang Zhang Hui Liu Shizhu Ling Gaohong. Preparation and properties of amorphous carbon films on the crystal silicon substrates by RF plasma[J]. Nuclear Techniques, 1987, 0(1)
Authors:Cheng Shichang Zhang Hui Liu Shizhu Ling Gaohong
Affiliation:Wuhan University
Abstract:amorphous carbon films are formed from benzene vapour using inductive-couple type radio-frequency (RF) plasma. Substrates are n- and p-type single crystal silicon. TEM, STMS and IR spectroscopy are used for analysis of the structure and composition of the carbon films. Electric and optical properties of the films are investigated by other methods. Experimental results indicate that the bias voltage, RF power and the partial pressure of benzene vapour all evidently affect the behaviour of the carbon films. If the bias voltage is higher than 700 V, a transparent a-C:H films of high resistivity and high hardness will be formed. RF power has an influence upon the refractive index of the carbon films, it is between 1.9-2.1.
Keywords:RF plasma amorphous carbon films
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