Extracting parameters of OFET before and after threshold voltage using genetic algorithms

This paper presents a compact analytical model for the organic field-effect transistors (OFETs), which describes two main aspects, the first one is related to the behavior in above threshold regime, while the other corresponds to the below threshold regime. The total drain current in the OFET device is calculated as the sum of two components, with the inclusion of a smooth transition function in order to take into account both regions using a single expression. A genetic algorithm based approach (GA) is investigated as a parameter extraction tool in the case of the compact OFET model to find the parameters’ values from experimental data such as: mobility enhancement factor γ, threshold voltage V _Th , subthreshold swing S, channel length modulation λ, and knee region sharpness m. The comparison of the developed current model with the experimental data shows a good agreement in terms of the transfer and the output characteristics. Therefore, the GA based approach can be considered as a competitive candidate compared to the direct method.