Measuring stiffnesses and residual stresses of silicon nitride thin films |
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Authors: | S Hong T P Weihs J C Bravman W D Nix |
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Affiliation: | (1) Dept. of Materials Science and Engineering, Stanford University, 94305 Stanford, CA |
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Abstract: | The mechanical deflection of circular membranes of SiN
x
is presented as a technique for measuring the stiffness and residual stress of very thin, single-layer films. The dimensions
of the membranes are controlled precisely using standard photolithography, dry etching and wet etching techniques. Thicknesses
vary between 0.09 μm and 0.27 μm and average diameters range between 1100 μm and 4100 μm. A Nanoindenter is used to deflect
the membranes with a point force at their centers, and to continuously record the applied forces and the resulting deflections.
The analysis of the force-deflection data yields the values of Young’s moduli and residual stresses for the films. |
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Keywords: | Deflection of circular membranes stiffness and rasidual stress of SiN x films |
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