Conductivity Properties of Phosphorus-doped Hydrogenated Nanocrystalline Silicon Film |
| |
| Authors: | Ming LIU Dongfeng FU Zhou WANG Yingcai PENG Yuliang HE |
| |
| Affiliation: | Microelectronics Research and Development Center, Chinese Academy of Sciences, Beijing 100029, China... |
| |
| Abstract: | The conductivity of phosphorus-doped hydrogenated nanocrystalline Si (nc-Si:P:H) films is 10-1-101 W-1˙cm-1, two order of magnitude higher than that of undoped hydrogenated nanocrystalline Si (nc-Si:H) film. A series of conductivity temperature dependence curves show that the kink point temperature almost existing in hydrogenated amorphous Si (a-Si:H) film disappears. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《材料科学技术学报》浏览原始摘要信息 |
|
点击此处可从《材料科学技术学报》下载全文 |
|
