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2.5D转接板封装高频互连结构设计、分析与测试
引用本文:任晓黎,庞诚,秦征,平野,姜峰,薛恺,刘海燕,于大全.2.5D转接板封装高频互连结构设计、分析与测试[J].半导体学报,2016,37(4):045003-7.
作者姓名:任晓黎  庞诚  秦征  平野  姜峰  薛恺  刘海燕  于大全
作者单位:National Center for Advanced Packaging (NCAP China);Institute of Microelectronics, Chinese Academy of Sciences
基金项目:国家自然科学基金;中国科学院百人计划;国家自然科学基金项目(面上项目,重点项目,重大项目);中国科学院百人计划项目
摘    要:An interposer test vehicle with TSVs(through-silicon vias) and two redistribute layers(RDLs) on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide(CPW) and micro strip line(MSL) structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer(VNA). The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed,and the results were also presented and discussed in this paper.

关 键 词:interposer  TSV  (through-silicon  vias)  RDL  high-frequency  simulation  test  S-parameter
收稿时间:5/8/2015 12:00:00 AM
修稿时间:2015/10/14 0:00:00

Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer
Ren Xiaoli,Pang Cheng,Qin Zheng,Ping Ye,Jiang Feng,Xue Kai,Liu Haiyan.Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer[J].Chinese Journal of Semiconductors,2016,37(4):045003-7.
Authors:Ren Xiaoli  Pang Cheng  Qin Zheng  Ping Ye  Jiang Feng  Xue Kai  Liu Haiyan
Affiliation:1. National Center for Advanced Packaging(NCAP China), Wuxi 214315, China;2. National Center for Advanced Packaging(NCAP China), Wuxi 214315, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract:An interposer test vehicle with TSVs (through-silicon vias) and two redistribute layers (RDLs) on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide (CPW) and micro strip line (MSL) structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer (VNA). The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed, and the results were also presented and discussed in this paper.
Keywords:interposer  TSV (through-silicon vias)  RDL  high-frequency simulation  test  S-parameter
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