| Ti1-xAlxN薄膜的制备及性能研究 |
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| 引用本文： | 熊锐,李佐宜,胡作启,杨晓非,徐瑛,林更琪,胡用时. Ti1-xAlxN薄膜的制备及性能研究[J]. 真空科学与技术学报, 1998, 18(1): 22-25 |
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| 作者姓名： | 熊锐 李佐宜 胡作启 杨晓非 徐瑛 林更琪 胡用时 |
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| 作者单位： | 华中理工大学固体电子学系,武汉,430074 |
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| 基金项目： | 国家教委博士点基金!9548728 |
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| 摘 要： | 介绍了利用反应溅射法制备Ti1-xAlxN薄膜的工艺过程，测量并分析了Ti1-xAlxN薄膜的光学性能及电阻率与薄膜成分的关系。结果表明，Ti1-zalxN薄膜的折射率和消光系数均随薄膜中Al含量x的增加而减小，电阻率则随x的增加而增大。并从薄膜的基本结构变化过程对实验结果作出解释。
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| 关 键 词： | (Ti Al)N薄膜 射频反应溅射 光学性质 电阻率 |
| 修稿时间： | 1997-07-04 |
Preparation and Properties of Ti1- xAlxN Films |
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| XIONG Rui,Li Zuoyi,Hu Zuoqi,Yang Xiaofei,Xu Ying,Lin Gengqi,Hu Yongshi. Preparation and Properties of Ti1- xAlxN Films[J]. JOurnal of Vacuum Science and Technology, 1998, 18(1): 22-25 |
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| Authors: | XIONG Rui Li Zuoyi Hu Zuoqi Yang Xiaofei Xu Ying Lin Gengqi Hu Yongshi |
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| Abstract: | Ti1 - x AlxN films were fabricated using RF reactive sputtering method. The optical properties and the electric resistivity of the films at the room temperture as a function of mol% Al in the Ti1-xAlxN were measared, the results show that the refractive index and extinction coefficient are decreasing with the increasing of the mol% Al in (Ti,Al)N,but the electric resistivity of the films are increasing with the increasing of the Al content. All the change is explained by the change of the structure. |
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| Keywords: | (Ti Al) N films RF reactive sputtering Optical property Electric resistivity |
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