Selective and wideband UV sensors |
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| Authors: | V. N. Komashchenko K. V. Kolezhuk E. F. Venger G. I. Sheremetova O. A. Mishchuk A. V. Komashchenko |
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| Affiliation: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine;(2) Research Institute of Petrochemical Industry, Kiev, Ukraine |
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| Abstract: | It is shown that thin-film photoelectric devices can be constructed on the basis of wide-gap AIIBVI semiconductor compounds grown on a narrow-gap quasi-single-crystal substrate. The potential barrier ΔE v existing at the interface of a multilayer heterostructure blocks the contribution of the narrow-gap component to the total photocurrent. Based on these heterostructures, selective and wideband UV sensors requiring no additional filters are developed for the first time. |
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